In prototypes fabricated using a cutting-edge 16-nanometer (nm) process, the new SRAM achieved a fast read access time of 313 picoseconds (ps) at the low voltage of 0.8 V. Single-port SRAM cells are ...
SAN MATEO, Calif. — With the rollout of its Star Memory System, an on-chip test and repair mechanism for embedded SRAM, memory compiler specialist Virage Logic Corp. is making good on its promise to ...
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