To reach the 2050 goal of a more reliable, resilient, and low-carbon grid, faster and higher power electronic devices with ...

Accordany to the company, the family of medium-voltage CoolGaN Transistors G5 with integrated Schottky diode increases the ...

Abstract: This paper investigates the single event effects (SEE) in SiC MOSFET integrated with a junction barrier diode (JMOS). During irradiation experiments, JMOS exhibited drain-to-source leakage ...

The use of an anti-parallel Schottky barrier diode (SBD) can improve the performance and reliability of silicon carbide MOSFETs in power conversion applications. In this article, we will showcase ...

Physicists have created the tiniest light-emitting diode (LED) displays ever 1. The image above was shown on a monochromatic display with pixels less than 100 micrometres across, about the width ...

School of Physics and Centre for Research on Adaptive Nanostructures and Nanodevices ((CRANN)), Trinity College Dublin, Dublin 2 D2, Ireland ...

Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan, ROC ...

The team from Washington University in St. Louis (WashU) in Missouri built their time quasicrystals inside a millimeter-sized chunk of diamond, an advancement they believe could revolutionize ...

Infineon Technologies AG addresses this need with its CoolSiC Schottky Diode 2000 V G5 family—the industry’s first discrete 2000 V silicon carbide (SiC) diodes, introduced in September 2024. Expanding ...