Nexperia has launched a 1,200V 30mΩ silicon carbide mosfet in a top-side-cooled plastic package with a 18.5 x 14mm footprint.

With the recent announcement by Infineon that GaN use is reaching the “tipping point” for accelerated adoption, maybe it’s ...

The modules integrate two low-loss, high-speed switching SiC MOSFETs with reliable body diode and deliver up to 333 W with ...

Magnachip Semiconductor has announced a significant expansion of its product line-up with the launch of 25 new 6th-generation ...

Magnachip Semiconductor Corporation ("Magnachip" or "Company") (NYSE: MX) announced a significant expansion of its product ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Qorvo's QSPICE now features rapid model generation for JFETs, MOSFETs, and diodes, improving circuit simulation efficiency ...

high voltage Super Junction MOSFETs, power integrated circuits, and integrated function power devices. The Diodes segment provides rectifiers, small signal diodes, protection diodes, thyristors ...

College of Electronic Information, Hangzhou Dianzi University, Hangzhou, China. From the mid-1990s onwards, the use of dedicated CMOS-compatible processes fostered significant advances in building ...

Magnachip Semiconductor has announced a significant expansion of its product lineup with the launch of 25 new 6th-generation ...