Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Diodes Incorporated has expanded its SiC product portfolio with a series of five high-performance, low figure-of-merit (FOM) ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

TDK Corporation has expanded its CGA series for automotive multilayer ceramic capacitors (MLCCs) to 10 µF at 100 V in 3225 size (3.2 x 2.5 x 2.5 mm – L x W x H), with X7R characteristics (Class Ⅱ ...

Vishay Intertechnology, Inc.’s VSH share price has dipped by 6.03%, which has investors questioning if this is right time to ...

Abstract: A front-end circuit of single-photon avalanche diode (SPAD) which achieves dual active quenching and compensates the breakdown voltage shift due to temperature is presented in this article.

This article highlights effective design practices for gallium nitride (GaN) half-bridge converters driven by a 100 V ...

Is it a costly, but clean, power supply? Or a noisier, less expensive, and lower-loss design? Or (gulp) something even more ...

the power rating and loss of the active capacitor circuit are reduced significantly. The structure, circuit implementations, operation principles, and control of the hybrid capacitor are analyzed in ...

Optical scanners typically have a very high number of diodes per inch to capture these ... capacitive fingerprint scanners use arrays of tiny capacitor circuits to collect data.